NXV08B800DT1

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Overview of NXV08B800DT1

Part NumberNXV08B800DT1
Manufactureronsemi
DescriptionIC
DatasheetsDownload NXV08B800DT1 Datasheet PDFPDF Icon
Price for NXV08B800DT1

Specification of NXV08B800DT1

Status
Active
Series
Automotive, AEC-Q101
Package
Bulk
Supplier
onsemi
Technology
MOSFET (Metal Oxide)
Configuration
-
FET Feature
-
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25C
-
Rds On (Max) @ Id, Vgs
0.46mOhm @ 160A, 12V
Vgs(th) (Max) @ Id
4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
502nC @ 12V
Input Capacitance (Ciss) (Max) @ Vds
30150pF @ 40V
Power - Max
-
Operating Temperature
-40C ~ 125C (TA)
Mounting Type
Through Hole
Package / Case
17-PowerDIP Module (1.390", 35.30mm)
Supplier Device Package
APM17-MDC

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