P3D12010G2

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Overview of P3D12010G2

Part NumberP3D12010G2
ManufacturerPN Junction Semiconductor
DescriptionDIODE SIL CARB 1.2KV 33A TO263-2
DatasheetsDownload P3D12010G2 Datasheet PDFPDF Icon
Price for P3D12010G2

Specification of P3D12010G2

Status
Active
Series
P3D
Package
Tape & Reel (TR)
Supplier
PN Junction Semiconductor
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
33A
Voltage - Forward (Vf) (Max) @ If
-
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 650 V
Capacitance @ Vr, F
-
Mounting Type
-
Package / Case
TO-263-2
Supplier Device Package
TO-263-2
Operating Temperature - Junction
-55C ~ 175C

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