P3M06060G7

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Overview of P3M06060G7

Part NumberP3M06060G7
ManufacturerPN Junction Semiconductor
DescriptionSICFET N-CH 650V 44A TO-263-7
DatasheetsDownload P3M06060G7 Datasheet PDFPDF Icon
Price for P3M06060G7

Specification of P3M06060G7

Status
Active
Series
P3M
Package
Tape & Reel (TR)
Supplier
PN Junction Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
44A
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
79mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
2.2V @ 20mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
+20V, -8V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
159W
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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