PDTC123EEF,115

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Overview of PDTC123EEF,115

Part NumberPDTC123EEF,115
ManufacturerNXP Semiconductors
DescriptionTRANS PREBIAS NPN 250MW SC89
DatasheetsDownload PDTC123EEF,115 Datasheet PDFPDF Icon
Price for PDTC123EEF,115

Specification of PDTC123EEF,115

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT)
Supplier
NXP USA Inc.
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500A, 10mA
Current - Collector Cutoff (Max)
1A
Frequency - Transition
-
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Supplier Device Package
SC-89

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