PDTD113EUF

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Overview of PDTD113EUF

Part NumberPDTD113EUF
ManufacturerNXP Semiconductors
DescriptionNOW NEXPERIA PDTD113EUF - SMALL
DatasheetsDownload PDTD113EUF Datasheet PDFPDF Icon
Price for PDTD113EUF

Specification of PDTD113EUF

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
225 MHz
Power - Max
300 mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SOT-323

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