PH3120L,115-NXP

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Overview of PH3120L,115-NXP

Part NumberPH3120L,115-NXP
ManufacturerNXP Semiconductors
DescriptionPOWER FIELD-EFFECT TRANSISTOR, 1
Price for PH3120L,115-NXP

Specification of PH3120L,115-NXP

Status
Active
Series
TrenchMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.65mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
48.5 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4457 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669

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