PH5330E,115

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Overview of PH5330E,115

Part NumberPH5330E,115
ManufacturerNXP Semiconductors
DescriptionMOSFET N-CH 30V 80A LFPAK56
Price for PH5330E,115

Specification of PH5330E,115

Status
Obsolete
Series
TrenchMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
NXP USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2010 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669

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