PHD9NQ20T,118

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Overview of PHD9NQ20T,118

Part NumberPHD9NQ20T,118
ManufacturerNexperia
DescriptionMOSFET N-CH 200V 8.7A DPAK
DatasheetsDownload PHD9NQ20T,118 Datasheet PDFPDF Icon
Price for PHD9NQ20T,118

Specification of PHD9NQ20T,118

Status
Obsolete
Series
TrenchMOS™
Package
Tape & Reel (TR)
Supplier
Nexperia USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
959 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
88W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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