PHK12NQ10T,518

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Overview of PHK12NQ10T,518

Part NumberPHK12NQ10T,518
ManufacturerNXP Semiconductors
DescriptionMOSFET N-CH 100V 11.6A 8SO
DatasheetsDownload PHK12NQ10T,518 Datasheet PDFPDF Icon
Price for PHK12NQ10T,518

Specification of PHK12NQ10T,518

Status
Obsolete
Series
TrenchMOS™
Package
Tape & Reel (TR)
Supplier
NXP USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1965 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
8.9W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

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