PHKD13N03LT,518

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Overview of PHKD13N03LT,518

Part NumberPHKD13N03LT,518
ManufacturerNXP Semiconductors
DescriptionSMALL SIGNAL FIELD-EFFECT TRANSI
DatasheetsDownload PHKD13N03LT,518 Datasheet PDFPDF Icon
Price for PHKD13N03LT,518

Specification of PHKD13N03LT,518

Status
Active
Series
TrenchMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
10.4A
Rds On (Max) @ Id, Vgs
20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
752pF @ 15V
Power - Max
3.57W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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