PJD4NA50A_L2_00001

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Overview of PJD4NA50A_L2_00001

Part NumberPJD4NA50A_L2_00001
ManufacturerPanjit International Inc.
Description500V N-CHANNEL MOSFET
DatasheetsDownload PJD4NA50A_L2_00001 Datasheet PDFPDF Icon
Price for PJD4NA50A_L2_00001

Specification of PJD4NA50A_L2_00001

Status
Not For New Designs
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Panjit International Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
9.8 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
449 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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