PJMF190N60E1_T0_00001

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Overview of PJMF190N60E1_T0_00001

Part NumberPJMF190N60E1_T0_00001
ManufacturerPanjit International Inc.
Description600V SUPER JUNCITON MOSFET
DatasheetsDownload PJMF190N60E1_T0_00001 Datasheet PDFPDF Icon
Price for PJMF190N60E1_T0_00001

Specification of PJMF190N60E1_T0_00001

Status
Active
Package
Tube
Supplier
Panjit International Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1410 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220AB-F
Package / Case
TO-220-3 Full Pack, Isolated Tab

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