PJZ18NA50_T0_10001

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Overview of PJZ18NA50_T0_10001

Part NumberPJZ18NA50_T0_10001
ManufacturerPanjit International Inc.
DescriptionMOSFET
Price for PJZ18NA50_T0_10001

Specification of PJZ18NA50_T0_10001

Status
Obsolete
Package
Tube
Supplier
Panjit International Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
350mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2407 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PL
Package / Case
TO-3P-3, SC-65-3

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