PMDPB95XNE,115

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Overview of PMDPB95XNE,115

Part NumberPMDPB95XNE,115
ManufacturerNXP Semiconductors
DescriptionMOSFET 2N-CH 30V 2.4A HUSON6
DatasheetsDownload PMDPB95XNE,115 Datasheet PDFPDF Icon
Price for PMDPB95XNE,115

Specification of PMDPB95XNE,115

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
NXP USA Inc.,Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
2.4A
Rds On (Max) @ Id, Vgs
120mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
143pF @ 15V
Power - Max
475mW
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UDFN Exposed Pad
Supplier Device Package
6-HUSON (2x2)

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