PMGD8000LN,115

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Overview of PMGD8000LN,115

Part NumberPMGD8000LN,115
ManufacturerNXP Semiconductors
DescriptionMOSFET 2N-CH 30V 0.125A 6TSSOP
DatasheetsDownload PMGD8000LN,115 Datasheet PDFPDF Icon
Price for PMGD8000LN,115

Specification of PMGD8000LN,115

Status
Obsolete
Series
TrenchMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
NXP USA Inc.
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
125mA
Rds On (Max) @ Id, Vgs
8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.5V @ 100A
Gate Charge (Qg) (Max) @ Vgs
0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
18.5pF @ 5V
Power - Max
200mW
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
6-TSSOP

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