PMN27XPE115

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Overview of PMN27XPE115

Part NumberPMN27XPE115
ManufacturerNXP Semiconductors
DescriptionSMALL SIGNAL FET
DatasheetsDownload PMN27XPE115 Datasheet PDFPDF Icon
Price for PMN27XPE115

Specification of PMN27XPE115

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
30mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.25V @ 250A
Gate Charge (Qg) (Max) @ Vgs
22.5 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
1770 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
530mW (Ta), 8.33W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SC-74, SOT-457

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