PMPB07R3ENAX

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Overview of PMPB07R3ENAX

Part NumberPMPB07R3ENAX
ManufacturerNexperia
DescriptionSMALL SIGNAL MOSFET FOR MOBILE
DatasheetsDownload PMPB07R3ENAX Datasheet PDFPDF Icon
Price for PMPB07R3ENAX

Specification of PMPB07R3ENAX

Status
Active
Series
TrenchMOS™
Package
Tape & Reel (TR)
Supplier
Nexperia USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.6mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
914 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.9W (Ta), 12.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN2020M-6
Package / Case
6-UDFN Exposed Pad

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