PMT560ENEAX

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Overview of PMT560ENEAX

Part NumberPMT560ENEAX
ManufacturerNXP Semiconductors
DescriptionNEXPERIA PMT560ENEA - 100V N-CHA
DatasheetsDownload PMT560ENEAX Datasheet PDFPDF Icon
Price for PMT560ENEAX

Specification of PMT560ENEAX

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
715mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250A
Gate Charge (Qg) (Max) @ Vgs
4.4 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
112 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA

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