PMWD26UN,518

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Overview of PMWD26UN,518

Part NumberPMWD26UN,518
ManufacturerNXP Semiconductors
DescriptionMOSFET 2N-CH 20V 7.8A 8TSSOP
DatasheetsDownload PMWD26UN,518 Datasheet PDFPDF Icon
Price for PMWD26UN,518

Specification of PMWD26UN,518

Status
Obsolete
Series
TrenchMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
NXP USA Inc.
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
7.8A
Rds On (Max) @ Id, Vgs
30mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs
23.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1366pF @ 16V
Power - Max
3.1W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP

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