PSMN1R2-30YLDX

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Overview of PSMN1R2-30YLDX

Part NumberPSMN1R2-30YLDX
ManufacturerNexperia
DescriptionMOSFET N-CH 30V 100A LFPAK56
DatasheetsDownload PSMN1R2-30YLDX Datasheet PDFPDF Icon
Price for PSMN1R2-30YLDX

Specification of PSMN1R2-30YLDX

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Nexperia USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.24mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4616 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
194W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669

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