PSMN8R5-100ESQ

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Overview of PSMN8R5-100ESQ

Part NumberPSMN8R5-100ESQ
ManufacturerNexperia
DescriptionMOSFET N-CH 100V 100A I2PAK
DatasheetsDownload PSMN8R5-100ESQ Datasheet PDFPDF Icon
Price for PSMN8R5-100ESQ

Specification of PSMN8R5-100ESQ

Status
Obsolete
Package
Tube
Supplier
Nexperia USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
100A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5512 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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