PSMN9R0-30LL,115

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Overview of PSMN9R0-30LL,115

Part NumberPSMN9R0-30LL,115
ManufacturerNXP Semiconductors
DescriptionMOSFET N-CH 30V 21A 8DFN
DatasheetsDownload PSMN9R0-30LL,115 Datasheet PDFPDF Icon
Price for PSMN9R0-30LL,115

Specification of PSMN9R0-30LL,115

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
NXP USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
20.6 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1193 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-DFN3333 (3.3x3.3)
Package / Case
8-VDFN Exposed Pad

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