QH8M22TCR

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Overview of QH8M22TCR

Part NumberQH8M22TCR
ManufacturerROHM Semiconductor
DescriptionQH8M22 IS THE HIGH RELIABILITY T
DatasheetsDownload QH8M22TCR Datasheet PDFPDF Icon
Price for QH8M22TCR

Specification of QH8M22TCR

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25C
4.5A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs
46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 10A, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
2.6nC @ 10V, 9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
193pF @ 20V, 450pF @ 20V
Power - Max
1.1W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
TSMT8

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