QS6M3TR

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Overview of QS6M3TR

Part NumberQS6M3TR
ManufacturerROHM Semiconductor
DescriptionMOSFET N/P-CH 30V/20V 1.5A TSMT6
DatasheetsDownload QS6M3TR Datasheet PDFPDF Icon
Price for QS6M3TR

Specification of QS6M3TR

Status
Not For New Designs
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V, 20V
Current - Continuous Drain (Id) @ 25C
1.5A
Rds On (Max) @ Id, Vgs
230mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
80pF @ 10V
Power - Max
1.25W
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
TSMT6 (SC-95)

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