QS8M31TR

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Overview of QS8M31TR

Part NumberQS8M31TR
ManufacturerROHM Semiconductor
DescriptionQS8M31 IS COMPLEX TYPE MOSFET(P+
DatasheetsDownload QS8M31TR Datasheet PDFPDF Icon
Price for QS8M31TR

Specification of QS8M31TR

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
3A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs
112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4nC @ 5V, 7.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
270pF @ 10V, 750pF @ 10V
Power - Max
1.1W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
TSMT8

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