R5009FNX

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Overview of R5009FNX

Part NumberR5009FNX
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 500V 9A TO220FM
DatasheetsDownload R5009FNX Datasheet PDFPDF Icon
Price for R5009FNX

Specification of R5009FNX

Status
Not For New Designs
Package
Bulk
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
840mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
630 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack

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