R5016ANX

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Overview of R5016ANX

Part NumberR5016ANX
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 500V 16A TO220FM
DatasheetsDownload R5016ANX Datasheet PDFPDF Icon
Price for R5016ANX

Specification of R5016ANX

Status
Not For New Designs
Package
Bulk
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
270mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack

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