R6006KND3TL1

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Overview of R6006KND3TL1

Part NumberR6006KND3TL1
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 600V 6A TO252
DatasheetsDownload R6006KND3TL1 Datasheet PDFPDF Icon
Price for R6006KND3TL1

Specification of R6006KND3TL1

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
830mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
70W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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