R6009KNX

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Overview of R6009KNX

Part NumberR6009KNX
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 600V 9A TO220FM
DatasheetsDownload R6009KNX Datasheet PDFPDF Icon
Price for R6009KNX

Specification of R6009KNX

Status
Active
Package
Bulk
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack

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