R6025FNZ1C9

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Overview of R6025FNZ1C9

Part NumberR6025FNZ1C9
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 600V 25A TO247
DatasheetsDownload R6025FNZ1C9 Datasheet PDFPDF Icon
Price for R6025FNZ1C9

Specification of R6025FNZ1C9

Status
Obsolete
Package
Tube
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3

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