R6030KNZ4C13

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Overview of R6030KNZ4C13

Part NumberR6030KNZ4C13
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 600V 30A TO247
DatasheetsDownload R6030KNZ4C13 Datasheet PDFPDF Icon
Price for R6030KNZ4C13

Specification of R6030KNZ4C13

Status
Active
Package
Tube
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
305W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3

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