R8009KNXC7G

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Overview of R8009KNXC7G

Part NumberR8009KNXC7G
ManufacturerROHM Semiconductor
DescriptionHIGH-SPEED SWITCHING NCH 800V 9A
DatasheetsDownload R8009KNXC7G Datasheet PDFPDF Icon
Price for R8009KNXC7G

Specification of R8009KNXC7G

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT)
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
59W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack

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