RCD060N25TL

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Overview of RCD060N25TL

Part NumberRCD060N25TL
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 250V 6A CPT3
DatasheetsDownload RCD060N25TL Datasheet PDFPDF Icon
Price for RCD060N25TL

Specification of RCD060N25TL

Status
Not For New Designs
Package
Tape & Reel (TR)
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
530mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
840 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
850mW (Ta), 20W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CPT3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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