RD3S100CNTL1

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Overview of RD3S100CNTL1

Part NumberRD3S100CNTL1
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 190V 10A TO252
DatasheetsDownload RD3S100CNTL1 Datasheet PDFPDF Icon
Price for RD3S100CNTL1

Specification of RD3S100CNTL1

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
190 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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