RF4C100BCTCR

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Overview of RF4C100BCTCR

Part NumberRF4C100BCTCR
ManufacturerROHM Semiconductor
DescriptionMOSFET P-CH 20V 10A HUML2020L8
DatasheetsDownload RF4C100BCTCR Datasheet PDFPDF Icon
Price for RF4C100BCTCR

Specification of RF4C100BCTCR

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
15.6mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
23.5 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
1660 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
HUML2020L8
Package / Case
8-PowerUDFN

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