RFA100N05E

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Overview of RFA100N05E

Part NumberRFA100N05E
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload RFA100N05E Datasheet PDFPDF Icon
Price for RFA100N05E

Specification of RFA100N05E

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-218-5
Package / Case
TO-218-5

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