RFD10P03LSM

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Overview of RFD10P03LSM

Part NumberRFD10P03LSM
Manufactureronsemi
DescriptionMOSFET P-CH 30V 10A TO252-3
DatasheetsDownload RFD10P03LSM Datasheet PDFPDF Icon
Price for RFD10P03LSM

Specification of RFD10P03LSM

Status
Obsolete
Package
Tube
Supplier
onsemi
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
200mOhm @ 10A, 5V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1035 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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