RFD20N03

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Overview of RFD20N03

Part NumberRFD20N03
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload RFD20N03 Datasheet PDFPDF Icon
Price for RFD20N03

Specification of RFD20N03

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 20 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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