RFG30P05

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Overview of RFG30P05

Part NumberRFG30P05
ManufacturerHarris Corporation
DescriptionP-CHANNEL POWER MOSFET
DatasheetsDownload RFG30P05 Datasheet PDFPDF Icon
Price for RFG30P05

Specification of RFG30P05

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 20 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3

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