RFP17N06L

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Overview of RFP17N06L

Part NumberRFP17N06L
ManufacturerHarris Corporation
DescriptionN-CHANNEL, MOSFET
DatasheetsDownload RFP17N06L Datasheet PDFPDF Icon
Price for RFP17N06L

Specification of RFP17N06L

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Rds On (Max) @ Id, Vgs
130mOhm @ 17A, 5V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 30 V
Vgs (Max)
10V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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