RGTVX2TS65DGC11

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Overview of RGTVX2TS65DGC11

Part NumberRGTVX2TS65DGC11
ManufacturerROHM Semiconductor
DescriptionIGBT TRENCH FLD 650V 111A TO247N
DatasheetsDownload RGTVX2TS65DGC11 Datasheet PDFPDF Icon
Price for RGTVX2TS65DGC11

Specification of RGTVX2TS65DGC11

Status
Not For New Designs
Package
Tube
Supplier
Rohm Semiconductor
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
111 A
Current - Collector Pulsed (Icm)
240 A
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 60A
Power - Max
319 W
Switching Energy
2.08mJ (on), 1.15mJ (off)
Input Type
Standard
Gate Charge
123 nC
Td (on/off) @ 25C
49ns/150ns
Test Condition
400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247N

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