RHU002N06T106

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Overview of RHU002N06T106

Part NumberRHU002N06T106
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 60V 200MA UMT3
DatasheetsDownload RHU002N06T106 Datasheet PDFPDF Icon
Price for RHU002N06T106

Specification of RHU002N06T106

Status
Not For New Designs
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
2.4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
4.4 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
UMT3
Package / Case
SC-70, SOT-323

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