RJ1G12BGNTLL

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Overview of RJ1G12BGNTLL

Part NumberRJ1G12BGNTLL
ManufacturerROHM Semiconductor
DescriptionMOSFET N-CH 40V 120A LPTL
DatasheetsDownload RJ1G12BGNTLL Datasheet PDFPDF Icon
Price for RJ1G12BGNTLL

Specification of RJ1G12BGNTLL

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.86mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
12500 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
178W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LPTL
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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