RM12N650IP

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of RM12N650IP

Part NumberRM12N650IP
ManufacturerRectron USA
DescriptionMOSFET N-CH 650V 11.5A TO251
DatasheetsDownload RM12N650IP Datasheet PDFPDF Icon
Price for RM12N650IP

Specification of RM12N650IP

Status
Active
Package
Tube
Supplier
Rectron USA
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
101W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Stub Leads, IPak

Parts Information

Fields marked with a * are required
Download CSVCopy Table
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)

Contact Information

Fields marked with a * are required

Introduction

RM12N650IP is in Stock, Find RM12N650IP electronics components stock, Technical information, Inventory and Price here at Ic-find.com, send us an inquiry for RM12N650IP to get the price and lead time now! We can offer fast shipment via DHL/FedEx/UPS.

Email us: [email protected] or RFQ RM12N650IP Online.

FAQ

  • 1 How to place an order?[Click to Expand]

  • 2 What payment methods do you offer?[Click to Expand]

  • 3 How do you handle the shipment?[Click to Expand]

  • 4 I can't find a part on IC-find, what should I do?[Click to Expand]

Recommend Products

Your RFQ Preview

Fields marked with a * are required
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)
Continue Shopping
Go RFQ Page