RM135N100HD

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Overview of RM135N100HD

Part NumberRM135N100HD
ManufacturerRectron USA
DescriptionMOSFET N-CH 100V 135A TO263-2
DatasheetsDownload RM135N100HD Datasheet PDFPDF Icon
Price for RM135N100HD

Specification of RM135N100HD

Status
Active
Package
Tape & Reel (TR)
Supplier
Rectron USA
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
135A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6400 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
210W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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