RM1A5N30S3AE

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Overview of RM1A5N30S3AE

Part NumberRM1A5N30S3AE
ManufacturerRectron USA
DescriptionMOSFET N-CH 30V 1.5A/1.4A SOT323
DatasheetsDownload RM1A5N30S3AE Datasheet PDFPDF Icon
Price for RM1A5N30S3AE

Specification of RM1A5N30S3AE

Status
Active
Package
Tape & Reel (TR)
Supplier
Rectron USA
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
1.5A (Ta), 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
144mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
10V
Input Capacitance (Ciss) (Max) @ Vds
105 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta), 500mW (Tc)
Operating Temperature
-50C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-323
Package / Case
SC-70, SOT-323

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