RM2003

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Overview of RM2003

Part NumberRM2003
ManufacturerRectron USA
DescriptionMOSFET N&P-CH 20V 3A SOT23-6
DatasheetsDownload RM2003 Datasheet PDFPDF Icon
Price for RM2003

Specification of RM2003

Status
Active
Package
Tape & Reel (TR)
Supplier
Rectron USA
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
3A (Ta)
Rds On (Max) @ Id, Vgs
35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250A, 1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5nC @ 4.5V, 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
260pF @ 10V, 325pF @ 10V
Power - Max
800mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Supplier Device Package
SOT-23-6

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