RM2P60S2

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Overview of RM2P60S2

Part NumberRM2P60S2
ManufacturerRectron USA
DescriptionMOSFET P-CHANNEL 60V 1.9A SOT23
DatasheetsDownload RM2P60S2 Datasheet PDFPDF Icon
Price for RM2P60S2

Specification of RM2P60S2

Status
Active
Package
Tape & Reel (TR)
Supplier
Rectron USA
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
215mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
358 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3

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