RM35N30DF

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Overview of RM35N30DF

Part NumberRM35N30DF
ManufacturerRectron USA
DescriptionMOSFET N-CHANNEL 30V 35A 8DFN
DatasheetsDownload RM35N30DF Datasheet PDFPDF Icon
Price for RM35N30DF

Specification of RM35N30DF

Status
Active
Package
Tape & Reel (TR)
Supplier
Rectron USA
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2330 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-DFN (5x6)
Package / Case
8-PowerVDFN

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