RM4P20ES6

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Overview of RM4P20ES6

Part NumberRM4P20ES6
ManufacturerRectron USA
DescriptionMOSFET P-CH 20V 3A/4.1A SOT23-6
DatasheetsDownload RM4P20ES6 Datasheet PDFPDF Icon
Price for RM4P20ES6

Specification of RM4P20ES6

Status
Active
Package
Tape & Reel (TR)
Supplier
Rectron USA
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
3A (Ta), 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
52mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-6
Package / Case
SOT-23-6

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